International Journal of Semiconductor Science & Technology (IJSST)

 

 

Volume 16, Number 1 (2025)

 

 

CONTENTS

 

 

 

Interface Engineering and Electrical Characterization of Advanced Semiconductor Materials
Venkatesh Iyer and Tanvi Kulkarni

 

Carrier Transport Mechanisms in Wide-Bandgap Semiconductor Heterostructures
Felix Hartmann and Greta Vogel

 

Design and Fabrication of High-Performance Gallium Nitride Power Devices
Matteo Ricci and Beatrice Lombardi

 

Optical Properties of Two-Dimensional Semiconductor Materials for Photonic Applications
Oliver Whitmore and Eleanor Hughes

 

Reliability Analysis of Semiconductor Devices under High-Temperature Operating Conditions
Bastien Moreau and Camille Laurent

 

Process Monitoring and Defect Characterization in Advanced Semiconductor Manufacturing
Alexander Petrov and Natalia Sokolova

 

Silicon Carbide-Based Power Electronics for High-Efficiency Energy Conversion
Daichi Yamamoto and Aiko Nishimura

 

Quantum Transport in Nanoscale Semiconductor Devices and Heterostructures
Ryohei Takahashi and Misaki Fujimoto

 

Electrical and Optical Characterization of Perovskite Semiconductor Thin Films
Chinedu Eze and Adaeze Okafor

 

Advances in Semiconductor Nanostructures for High-Sensitivity Sensor Applications
Thabo Mokoena and Lerato Molefe

 

 

 

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